Advances in Difference Equations
Volume 2011 (2011), Article ID 687363, 12 pages
doi:10.1155/2011/687363
Research Article

Fractional Models for Thermal Modeling and Temperature Estimation of a Transistor Junction

1CRONE Team IMS Laboratory, CNRS UMR 5218, 351 cours de la Libération, Bordeaux 1 University, 33405 Talence, France
2Direction de la Recherche et de l'Ingénierie Avancée, PSA Peugeot Citroën, Route de Gizy, VV1404, 78943 Vélizy Villacoublay Cedex, France
3POWER Team IMS Laboratory, CNRS UMR 5218, 351 Cours de la Libération, Bordeaux 1 University, 33405 Talence, France

Received 11 December 2010; Accepted 20 January 2011

Academic Editor: J. J. Trujillo

Copyright © 2011 Jocelyn Sabatier et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The thermal behavior of a power transistor mounted on a dissipator is considered in order to estimate the transistor temperature junction using a measure of the dissipator temperature only. The thermal transfers between the electric power applied to the transistor, the junction temperature, and the dissipator temperature are characterized by two fractional transfer functions. These models are then used in a Control Output Observer (COO) to estimate the transistor junction temperature.